高純度多結晶シリコンを使用し、高い光電変換効率を実現
CSG’s monocrystalline silicon wafers are produced from high-purity silicon using the CZ (Czochralski) method. The standard thickness ranges from 90 to 150 μm, with diameters between 182 mm and 230 mm. These wafers feature high photoelectric conversion efficiency and low Light-Induced Degradation. They are specifically used as the core substrate of high-efficiency photovoltaic cells and serve as a fundamental material in the clean energy industry chain.
Product Portfolio | |
N-type monosilicon wafer | N-type silicon is produced by doping a small amount of pentavalent elements, such as phosphorus (P). These elements are known as donor impurities, as they provide additional free electrons, thereby forming an N-type semiconductor. |
P-type monosilicon wafer | P-type silicon is produced by doping a small amount of trivalent elements, such as boron (B) or gallium (Ga). These elements are known as acceptor impurities, as they form positively charged holes, thereby forming a P-type semiconductor. |
Main Wafer Specifications | ||||
Parameter | Size (mm) | Diagonal (mm) | Thickness (μm) | Resistivity (Ω·cm) |
N-type mono silicon wafer / M10R | 182.2*183.75 | 256 | 130, AVG ≥130 | 0.9–1.6 |
N-type mono silicon wafer / G12R | 182.3*210 | 272 | 130, AVG ≥130 | 0.9–1.6 |
N-type mono silicon wafer / G12 | 210*210 | 295 | 130, AVG ≥130 | 0.9–1.6 |
P-type mono silicon wafer | 182.2*182.2 | 247 | 150, AVG ≥150 | 0.4–1.1 |
P-type mono silicon wafer | 210*210 | 295 | 150, AVG ≥150 | 0.4–1.1 |
10GW/Year
Adapted to high-efficiency cell technologies such as TOPCon, PERC, X-BC, and HJT.
